DocumentCode :
3552538
Title :
Charge control of field effect transistors
Author :
Hower, P.L. ; Gibbons, J.F.
Volume :
12
fYear :
1966
fDate :
1966
Firstpage :
100
Lastpage :
100
Abstract :
The drain current of a junction field effect transistor can be directly related to the charge on the gate terminal. For a device operating in the saturated region, the drain current is very nearly a linear function of the gate charge. As a result, if the conventional drain characteristics are re-drawn with curves of constant gate charge replacing curves of constant gate voltage, the characteristic curves will become uniformly spaced for equal increments in gate charge. This characterization can be useful to both user and designer of junction FET´s.
Keywords :
Charge measurement; Current measurement; Equations; FETs; Inorganic materials; Metal-insulator structures; Piezoelectric films; Piezoelectric transducers; Semiconductor materials; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1966 International
Type :
conf
DOI :
10.1109/IEDM.1966.187721
Filename :
1474560
Link To Document :
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