DocumentCode
3552539
Title
Fundamental revisions to the MOSFET device equations
Author
Mize, J.P. ; Colman, D. ; Mize, J.P. ; Colman, D.
Author_Institution
Texas Instruments, Inc., Dallas, Texas
Volume
12
fYear
1966
fDate
1966
Firstpage
100
Lastpage
100
Abstract
Hole mobility in a MOSFET channel layer varies significantly with gate voltage and crystalline orientation. The basic device equations are therefore revised in this investigation to take nonconstant mobility into account. Hole mobility in silicon P-type inversion layers has been measured for wide ranges of temperature and gate voltage, and for the
Keywords
Crystallization; Current measurement; Equations; FETs; Instruments; MOSFET circuits; Metal-insulator structures; Piezoelectric transducers; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1966 International
Type
conf
DOI
10.1109/IEDM.1966.187722
Filename
1474561
Link To Document