Title :
Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication
Author :
Imanishi, K. ; Ishikawa, T. ; Higuchi, M. ; Kondo, K. ; Katakami, T. ; Kuroda, S.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within ±1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication
Keywords :
aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; -0.8 V; AlInAs-InGaAs heterostructures; HEMT fabrication; III-V semiconductors; InP substrates; LSI fabrication; MBE growth; electron mobility; sheet electron density; threshold voltage standard deviation; uniform epitaxial growth; Electron mobility; Epitaxial growth; HEMTs; Indium gallium arsenide; Indium phosphide; Large scale integration; MODFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147459
