Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication

Author

Imanishi, K. ; Ishikawa, T. ; Higuchi, M. ; Kondo, K. ; Katakami, T. ; Kuroda, S.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

652

Lastpage

655

Abstract

It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within ±1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication

Keywords

aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; -0.8 V; AlInAs-InGaAs heterostructures; HEMT fabrication; III-V semiconductors; InP substrates; LSI fabrication; MBE growth; electron mobility; sheet electron density; threshold voltage standard deviation; uniform epitaxial growth; Electron mobility; Epitaxial growth; HEMTs; Indium gallium arsenide; Indium phosphide; Large scale integration; MODFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147459

Filename

147459