Title :
High performance diffused InGaAs JFETs in OEICs
Author :
Mansfield, C. ; Newson, D.J. ; Birdsall, P. ; Quayle, J.A.
Author_Institution :
British Telecom Labs., Ipswich, UK
Abstract :
The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; III-V semiconductor; JFET; PIN diodes; fabrication; high performance; highly uniform diffused InGaAs; receiver performance; ridge-waveguide lasers; vertically integrated optoelectronic integrated circuits; Doping; Epitaxial growth; FETs; Gate leakage; Indium gallium arsenide; Indium phosphide; JFETs; Optical device fabrication; Optical transmitters; Optoelectronic devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147461
