Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 μm lasers

Author

Gailhanou, M. ; Goldstein, L. ; Buffat, P.A. ; Brosson, P. ; Fernier, B. ; Benoit, J.

Author_Institution

Alcatel-Alsthom Recherche, Marcoussis, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

668

Lastpage

671

Abstract

The quality of GaInAsP/InP heterostructures grown by chemical beam epitaxy is analyzed using the light-current characteristics of board area lasers. The optical scattering linear coefficient (αs) and the effective radiative coefficient (B _eff) are calculates from the comparison of experimental data with a theoretical model. The low value of αs (9 cm^-1) indicated a low roughness of the interfaces. The value of B_eff is found to be comparable with those obtained for heterostructures grown with other techniques

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; light scattering; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.55 micron; GaInAsP-InP heterostructures; III-V semiconductors; board area lasers; chemical beam epitaxy; effective radiative coefficient; light-current characteristics; low interface roughness; optical scattering linear coefficient; quality; Chemical analysis; Chemical lasers; Epitaxial growth; Indium phosphide; Laser theory; Molecular beam epitaxial growth; Optical scattering; Substrates; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147463

Filename

147463