Title :
Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 μm lasers
Author :
Gailhanou, M. ; Goldstein, L. ; Buffat, P.A. ; Brosson, P. ; Fernier, B. ; Benoit, J.
Author_Institution :
Alcatel-Alsthom Recherche, Marcoussis, France
Abstract :
The quality of GaInAsP/InP heterostructures grown by chemical beam epitaxy is analyzed using the light-current characteristics of board area lasers. The optical scattering linear coefficient (αs) and the effective radiative coefficient (B eff) are calculates from the comparison of experimental data with a theoretical model. The low value of αs (9 cm-1) indicated a low roughness of the interfaces. The value of Beff is found to be comparable with those obtained for heterostructures grown with other techniques
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; light scattering; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.55 micron; GaInAsP-InP heterostructures; III-V semiconductors; board area lasers; chemical beam epitaxy; effective radiative coefficient; light-current characteristics; low interface roughness; optical scattering linear coefficient; quality; Chemical analysis; Chemical lasers; Epitaxial growth; Indium phosphide; Laser theory; Molecular beam epitaxial growth; Optical scattering; Substrates; Temperature; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147463
