Title :
Polarization insensitive 1.55 μm semiconductor optical amplifier integrated with passive waveguides made by MOCVD
Author :
Glastre, G. ; Rondi, D. ; Enard, A. ; Blondeau, R.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4×4 matrix, as well as low gain ripple
Keywords :
integrated optics; integrated optoelectronics; optical waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; MOCVD; chip gain; fabrication; fiber-to-fiber gains; passive waveguide integration; performance characteristics; polarization insensitive; semiconductor optical amplifiers; Chemical vapor deposition; Gain; Optical device fabrication; Optical fiber amplifiers; Optical fiber polarization; Optical polarization; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Tellurium;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147464
