Polarization insensitive 1.55 μm semiconductor optical amplifier integrated with passive waveguides made by MOCVD

Author

Glastre, G. ; Rondi, D. ; Enard, A. ; Blondeau, R.

Author_Institution

Thomson-CSF, Orsay, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

672

Lastpage

675

Abstract

The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4×4 matrix, as well as low gain ripple

Keywords

integrated optics; integrated optoelectronics; optical waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; MOCVD; chip gain; fabrication; fiber-to-fiber gains; passive waveguide integration; performance characteristics; polarization insensitive; semiconductor optical amplifiers; Chemical vapor deposition; Gain; Optical device fabrication; Optical fiber amplifiers; Optical fiber polarization; Optical polarization; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147464

Filename

147464