DocumentCode
3552593
Title
InAlAs/InxGa1-xAs HIGFETs (x ⩾0.53) for E/D FET logic applications
Author
Chan, Yi-Jen ; Pavlidis, Dimitris
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1991
fDate
8-11 Apr 1991
Firstpage
242
Lastpage
245
Abstract
The design of InAlAs/InxGa1-xAs (x⩾0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g m ,K ) and microwave (f T, f max) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was μ=12890 cm2/V-s, g m=438 mS/mm, fT=27 GHz. Orientation effects indicate a V th shift up to -0.128 V and a very small g m variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel
Keywords
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; integrated logic circuits; 27 GHz; 438 mS; DC characteristics; E/D FET logic applications; HIGFET operation; InAlAs-InxGa1-xAs; depletion-mode; enhancement mode; heterostructure insulated-gate FETs; lattice-matched; microwave characteristics; selective ion implantation; strained channel designs; Annealing; Buffer layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic; Strain control; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147465
Filename
147465
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