Title :
OMVPE growth of Ga1-xInxAs/InP (0.53⩽x⩽0.71) quantum wells with extremely narrow photoluminescence linewidths
Author :
Kamei, H. ; Hayashi, H.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
The optimization of the growth temperature in organometallic vapor phase epitaxy (OMVPE) for unstrained Ga0.47In0.53As/InP quantum wells (QWs) to realize atomically flat heterointerfaces and excellent optical qualities is described. GaInAs/InP QWs with narrow photoluminescence linewidths at 4.2 K have been grown at an optimal growth temperature of around 620°C. It is shown that strained-layer Ga1-xInxAs/InP (0.53⩽x⩽0.71) QWs grown by OMVPE have no disadvantages in optical or interfacial qualities
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 4.2 K; 620 C; Ga1-xInxAs-InP; OMVPE; atomically flat heterointerfaces; growth temperature; interfacial qualities; narrow photoluminescence linewidths; optical qualities; optimal growth temperature; optimization; organometallic vapor phase epitaxy; semiconductors; strained quantum wells; unstrained quantum wells; Atomic layer deposition; Gases; Indium phosphide; Photoluminescence; Temperature distribution; Ultraviolet sources;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147467
