• DocumentCode
    3552595
  • Title

    OMVPE growth of Ga1-xInxAs/InP (0.53⩽x⩽0.71) quantum wells with extremely narrow photoluminescence linewidths

  • Author

    Kamei, H. ; Hayashi, H.

  • Author_Institution
    Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    389
  • Lastpage
    394
  • Abstract
    The optimization of the growth temperature in organometallic vapor phase epitaxy (OMVPE) for unstrained Ga0.47In0.53As/InP quantum wells (QWs) to realize atomically flat heterointerfaces and excellent optical qualities is described. GaInAs/InP QWs with narrow photoluminescence linewidths at 4.2 K have been grown at an optimal growth temperature of around 620°C. It is shown that strained-layer Ga1-xInxAs/InP (0.53⩽x⩽0.71) QWs grown by OMVPE have no disadvantages in optical or interfacial qualities
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 4.2 K; 620 C; Ga1-xInxAs-InP; OMVPE; atomically flat heterointerfaces; growth temperature; interfacial qualities; narrow photoluminescence linewidths; optical qualities; optimal growth temperature; optimization; organometallic vapor phase epitaxy; semiconductors; strained quantum wells; unstrained quantum wells; Atomic layer deposition; Gases; Indium phosphide; Photoluminescence; Temperature distribution; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147467
  • Filename
    147467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552595