A 200 MHz, 300 ° gallium arsenide MIS transistor

This paper discusses R&D work performed on gallium arsenide insulated gate field effect transistors directed toward the development of a 200 MHz amplifier. Results on planar type diffused channel devices using deposited silicon dioxides as gate insulator are briefly discussed and restrictions on device performance are analyzed. Investigation of other possible insulators revealed that silicon nitride films show a wastly improved capacitance-voltage response over silicon dioxide films on GaAs.