Static and dynamic characteristics of vertical-cavity semiconductor laser amplifiers

Author

Wiedenmann, D. ; Michalzik, Rainer ; Moeller, B. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

518

Abstract

Summary form only given. Vertical-cavity semiconductor laser amplifiers (VCSLAs) are very interesting devices with regard to their potential use in parallel optical data processing and short-distance data-links. We have experimentally demonstrated a InGaAs vertical-cavity strained QW semiconductor laser amplifier with very good performance characteristics. The high static gain of up to 20 dB and the good dynamic behavior together with other advantages of vertical-cavity structures make these devices very interesting for parallel optical data processing and lightwave communications.

Keywords

III-V semiconductors; computer networks; gallium arsenide; indium compounds; laser cavity resonators; optical computing; optical fibre networks; optical transmitters; parallel processing; quantum well lasers; 20 dB; InGaAs; InGaAs vertical-cavity strained InGaAs QW semiconductor laser amplifier; dynamic characteristics; good dynamic behavior; high static gain; lightwave communications; parallel optical data processing; short-distance data-links; static characteristics; vertical-cavity semiconductor laser amplifiers; vertical-cavity structures; very good performance characteristics; Gallium arsenide; Laser excitation; Optical distortion; Optical pulse shaping; Optical pulses; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Space vector pulse width modulation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

865001