DocumentCode
3552662
Title
Air gap isolated microcircuits (beam lead devices)
Author
Rosvold, W.C. ; Legat, W.H.
Volume
13
fYear
1967
fDate
1967
Firstpage
68
Lastpage
68
Abstract
The technique for forming air gap isolated active areas suitable for making integrated circuits is made possible by the utilization of anisotropic etching of single crystal silicon. This technique is based on the extreme difference in etching rates in various crystallographic directions which makes it possible to form precise, discrete silicon mesas for the active devices of the circuits.
Keywords
Anisotropic magnetoresistance; Chemical processes; Crystalline materials; Crystallization; Crystallography; Etching; Gold; Integrated circuit interconnections; Production; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1967 International
Type
conf
DOI
10.1109/IEDM.1967.187829
Filename
1474910
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