An accurate numerical one-dimensional solution of the P-N junction under arbitrary transient conditions

A numerical iterative method of solution of the one-dimensional basic two-carrier transport equations describing the behavior of semiconductor junctions under both steady-state and transient conditions is presented. The method is of a very general character: none of the conventional assumptions and restrictions are introduced and freedom is available in the choice of the doping profile, recombination-generation law, mobility dependencies, injection level, and boundary conditions applied solely at the external contacts. For a specified arbitrary input signal of either current or voltage as a function of time, the solution yields terminal properties and all the quantities of interest in the interior of the device (such as carrier densities, electric field, electrostatic potential, particle and displacement currents) as functions of both position and time.