Surface recombination in semiconductors

The surface recombination and generation process in semiconductors is studied theoretically and experimentally. The theory for a uniform distribution of surface recombination centers is developed in a unified form, applicable both to the nonequilibrium MOS method employed in the case of thermally oxidized silicon and to the photoconductive-decay method traditionally employed for etched germanium surfaces. Results of this theory are compared, with measurements on thermally oxidized silicon structures, and with previously published data relating to etched germanium surfaces.