DocumentCode :
3552739
Title :
High-power, high-gain, subnanosecond-risetime amplification with electron beam - pn junction active devices
Author :
Norris, C.B., Jr.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
138
Lastpage :
140
Abstract :
The principles of operation and performance limitations of a class of high-performance electron beam -- pn junction active devices are discussed. The primary assumptions are that (1) the beam diode is designed so that carrier generation and transport occur entirely in a region of high electric field, (2) carrier pairs are created near one edge of the beam diode by the electron bombardment, (3) carriers traverse the depletion region with a constant drift velocity, and (4) the beam diode is connected to a real load impedance, such as a reflectionless transmission line.
Keywords :
Electron beams; Epitaxial layers; Fabrication; Impedance; Nanoscale devices; Performance gain; Semiconductor diodes; Silicon; Substrates; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187900
Filename :
1474981
Link To Document :
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