High-power, high-gain, subnanosecond-risetime amplification with electron beam - pn junction active devices

The principles of operation and performance limitations of a class of high-performance electron beam -- pn junction active devices are discussed. The primary assumptions are that (1) the beam diode is designed so that carrier generation and transport occur entirely in a region of high electric field, (2) carrier pairs are created near one edge of the beam diode by the electron bombardment, (3) carriers traverse the depletion region with a constant drift velocity, and (4) the beam diode is connected to a real load impedance, such as a reflectionless transmission line.