DocumentCode :
3552744
Title :
A P-I-N photovoltaic cell for thermo-photo-voltaic use
Author :
Schwartz, R.J. ; Kim, Chee Wee
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
142
Lastpage :
142
Abstract :
Germanium P-I-N photovoltaic cells, with active areas of 1.1 cm2, for use at the high power densities encountered in thermo-photo-voltaic energy conversion systems have been analyzed, fabricated, and tested. This structure has interdigitated contacts located on the unilluminated side of the device to prevent optical masking. Junctions were alloyed at low temperatures (430°C) in order to preserve the free carrier lifetime of the intrinsic region.
Keywords :
Aerospace materials; Circuit testing; Coaxial components; Electrodes; Libraries; Lighting; PIN photodiodes; Photovoltaic cells; Pulse measurements; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187905
Filename :
1474986
Link To Document :
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