The laminated overlay transistor, a new approach to high power-high frequency structures

This report describes the work performed in the development of laminated transistors for radio frequency application. It outlines the specific advantages obtainable from laminated structures, and presents specific transistor design considerations. Novel techniques and special tools that replace conventional transistor fabrication methods are explained as well as the evolution of these techniques leading to a complete processing technology. The method of incorporating emitter-ballast resistors to protect against secondary breakdown and the use of glassing for hermetic protection of junctions is described. A double heat-sink package of low thermal resistance has been developed specifically for use with the laminated transistor.