DocumentCode
3552767
Title
A high power electron beam switched P-N junction
Author
McArtney, J. ; Ake, N.
Volume
13
fYear
1967
fDate
1967
Firstpage
160
Lastpage
160
Abstract
A development program has resulted in an interesting high power pulse amplifier which is essentially an electron beam multiplier and is referred to as an EBM. The device consists of a silicon diode mounted on a heat sink, and an electron gun enclosed in an evaluated envelope. The gun and diode are arranged so that pulsed 20 KV electrons can be focused on to the central active portion of the diode.
Keywords
Anodes; Diodes; Electron beams; Electron tubes; Frequency; Microwave devices; Optical harmonic generation; P-n junctions; Power generation; Pulse amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1967 International
Type
conf
DOI
10.1109/IEDM.1967.187925
Filename
1475006
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