Title :
Complementary MOS-bipolar structure
Author :
Lin, H.C. ; Iyer, R.R. ; Ho, C.T.
Abstract :
Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
Keywords :
Aluminum oxide; Bipolar integrated circuits; Bipolar transistors; Conductivity; Dielectric substrates; Insulation; MOSFETs; Plasma devices; Silicon; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1968 International
DOI :
10.1109/IEDM.1968.187949
