Title :
High voltage integrated circuits
Author :
Camenzind, H.R. ; Polata, B. ; Kocsis, J.
Author_Institution :
Signetics Corp., Sunnyvale, Calif.
Abstract :
Silicon monolithic integrated circuits have been developed with a voltage capability (LVCEO) in excess of 300 volts. Novel process, device and circuit design techniques have been combined to achieve this voltage capability at a high yield. The design approach, integration and performance of three linear integrated circuits will be discussed: a video amplifier for direct connection to a TV picture tube, a gain block designed to extend the output voltage swing of operation amplifiers to ± 100 volts and a voltage regulator operating in the range from 10 to 300 volts.
Keywords :
Analog integrated circuits; Circuit synthesis; Integrated circuit yield; Monolithic integrated circuits; Operational amplifiers; Performance gain; Regulators; Silicon; TV; Voltage;
Conference_Titel :
Electron Devices Meeting, 1968 International
DOI :
10.1109/IEDM.1968.187977