A high-speed integrated Schottky-diode transistor logic circuit

The high-speed performance of saturated logic circuits are generally limited by collector storage time, Gold diffusion is commonly used to minimize minority-carrier lifetime, at the expense of increased junction leakage currents and increased collector resistance. This paper describes the use of compatible aluminum-silicon Schottky diodes connected in parallel with collector-base junctions. In this configuration the excess base current flows almost entirely through the Schottky diode resulting in a considerable reduction of the transistor storage time and eliminating the need for gold diffusion.