• DocumentCode
    3552891
  • Title

    A self-consistent regional approach to computer-aided transistor design

  • Author

    Schilling, R.B.

  • Author_Institution
    RCA Electronic Components, Somerville, N. J.
  • Volume
    14
  • fYear
    1968
  • fDate
    1968
  • Firstpage
    74
  • Lastpage
    74
  • Abstract
    The classical transistor theory developed by Shockley and later extended to high currents by Webster is based on division of the transistor into physically defined regions. Details of the electron density and electric field are limited to the base region. Inherent in the classical theory is a monotonically decreasing injected-minority-carrier density in the base region. More complex injected-carrier-density profiles have been shown to exist by Lindmayer and Wrigley for the junction diode. In all of these approaches base widening is prevented by the assumption of operation under "perfect sink conditions."
  • Keywords
    Charge carrier processes; Computerized monitoring; Design engineering; Diodes; Doping profiles; Electron mobility; Equations; Spontaneous emission; Time sharing computer systems; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1968 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1968.188004
  • Filename
    1475529