DocumentCode :
3552891
Title :
A self-consistent regional approach to computer-aided transistor design
Author :
Schilling, R.B.
Author_Institution :
RCA Electronic Components, Somerville, N. J.
Volume :
14
fYear :
1968
fDate :
1968
Firstpage :
74
Lastpage :
74
Abstract :
The classical transistor theory developed by Shockley and later extended to high currents by Webster is based on division of the transistor into physically defined regions. Details of the electron density and electric field are limited to the base region. Inherent in the classical theory is a monotonically decreasing injected-minority-carrier density in the base region. More complex injected-carrier-density profiles have been shown to exist by Lindmayer and Wrigley for the junction diode. In all of these approaches base widening is prevented by the assumption of operation under "perfect sink conditions."
Keywords :
Charge carrier processes; Computerized monitoring; Design engineering; Diodes; Doping profiles; Electron mobility; Equations; Spontaneous emission; Time sharing computer systems; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1968 International
Type :
conf
DOI :
10.1109/IEDM.1968.188004
Filename :
1475529
Link To Document :
بازگشت