Study of the inversion layer mobility and the improvement in gmof MOS-FET

The carrier transport mechanism in the inverted channel of Si-MOS structure is investigated in this study newly utilizing a method of the electron spin resonance absorption and the Hall-effects measurements. The surface conductance of the MOS-FET is well known to be strongly dependent on the substrates and the various conditions of the fabrication processes. So it was suggested that there should exist some relationship between the other process sensitive quantities such as the density of interface states and oxide charges. However, no direct approach to such quantities has been made aiming at the manifestation of the electronic configurations at the interface.