Title :
High performance ECL gates made by CDI and conventional methods
Author :
Eckl, D.J. ; Konkle, K.H. ; Richardson, F.K. ; Idzik, S.A. ; Luce, R.L.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Mass.
Abstract :
High performance integrated ECL gates with stage delays in the nanosecond and subnanosecond regions have been fabricated with conventional and collector diffused isolation (CDI) methods (1). These two fabrication techniques are compared on the basis of resulting circuit performance, circuit density, and laboratory yields.
Keywords :
Circuit optimization; Delay; Fabrication; Integrated circuit yield; Laboratories;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188099
