Efficient pulsed LSA operations of thick epitaxial GaAs

For the first time high power and high efficiency LSA has been obtained with thick epitaxial GaAs. This GaAs was grown with a constant-temperature, solution-growth method where a temperature gradient between the substrate and a source material causes the material transport. Due to the steady-state condition a good doping profile can be obtained. Electron concentration from 4×10¹⁴to 2×10¹⁵have been accomplished and mobility is typically 7,500 cm²/V-s. The doping profiles have been investigated with a new Laser probe-method developed by E. F. Johnson at Cornell University and will be reported.