Low current threshold metal film memory element

Electrically programmable MOS transistor read only memory (ROM) cells have been constructed using low current threshold chromium-chromium oxide film memory elements. The low current threshold of less than 10 milliamperes is attributed to electronmigration accelerated by high power density normal to the surface at a constriction in the film. Current interruption times of less than 100 microsec and typical which is adequate for efficient programming of ROM. Many physical aspects related to these memory elements and failure mechanisms of films were studied during the Read Only Memory program (1).