DocumentCode
3553062
Title
A new technology for high power monolithic IC
Author
Kobayashi, Ichiro
Volume
15
fYear
1969
fDate
1969
Firstpage
84
Lastpage
84
Abstract
The paper describes a newly developed fabrication technology for a monolithic linear power IC of new construction based on a level process in the epitaxial crystal growth on the silicon substrate. A power capability far beyond known in this field has been achieved. A typical example of the output power rating for an IC designed for use in a low frequency SEPP type power amplifier is 20 watts rms continuous service, and the total harmonic distortion content is less than 8% at 1 kHz. at 40 volts source voltage, with a circuit efficiency of 69%. (Saturated continuous output is 26 watts.)
Keywords
Fabrication; Frequency; Monolithic integrated circuits; Paper technology; Power amplifiers; Power generation; Power integrated circuits; Silicon; Substrates; Total harmonic distortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188142
Filename
1476023
Link To Document