Abstract :
The dc characteristics of the lateral transistor have been studied in detail theoretically and experimemally. Base and collector currents were examined separately as functions of emitter-base bias. In this way, it was possible to obtain a clear understanding of the independence of current gain on factors such as geometry, high-level injection, carrier lifetimes, surface recombination, and emitter efficiency. By independently measuring the relevant physical parameters and inserting their values into the theoretical model, transistor characteristics were obtained which agreed closely with experiment.
