Title :
Neutron hardened transistors
Author :
Smith, D.M. ; Hahn, L.A. ; Bradshaw, P.D. ; Hoffman, J.R.
Author_Institution :
Texas Instruments, Dallas, Texas
Abstract :
A procedure for the design of neutron-hardened transistors has been developed, based on Hahn´s NP vN transistor model. With this model, neutron effects in the emitter-base region and in the collector region can be distinguished and treated separately.
Keywords :
Charge carrier lifetime; Conductivity; Degradation; Electric variables; Frequency response; Instruments; Laboratories; Neutrons; Power transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188166
