Abstract :
Recently the thyristor has also been used in integrated circuits as a low power element, e.g., in flip flops as a switch and in oscillators as an active gain element. For those applications it is useful to predict the characteristic of the device as closely as possible. To date, little is known about the region of the negative differential resistance. This paper describes, a method for modelling the characteristics of planar thyristors with special emphasis on this region. This method is especially helpful since it eliminates costly empirical tests.
