DocumentCode
3553118
Title
Submillimeter-size semiconductor sensors
Author
Rindner, W. ; Cannon, R.
Volume
15
fYear
1969
fDate
1969
Firstpage
142
Lastpage
144
Abstract
The band-gap pressure dependence of gallium antimonide tunnel diodes has been exploited in the development of new electromechanical sensors. The outstanding features of these devices are simplicity, very small size (< 1 mm), good resolution (∼0.3 mm Hg for a 1000Hz bandwidth) and wide dynamic range (∼60 db). The temperature sensitivity corresponds to about 25 mm Hg/°C but is readily reduced by conventional compensation techniques to the equivalent of about 1 mm Hg/°C or better. The present design is particularly attractive for biomedical applications for which special configurations have been developed.
Keywords
Capacitance-voltage characteristics; Dynamic range; Electromagnetic heating; Ion implantation; Mercury (metals); Schottky diodes; Semiconductor device doping; Semiconductor diodes; Sensor phenomena and characterization; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188194
Filename
1476075
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