DocumentCode :
3553118
Title :
Submillimeter-size semiconductor sensors
Author :
Rindner, W. ; Cannon, R.
Volume :
15
fYear :
1969
fDate :
1969
Firstpage :
142
Lastpage :
144
Abstract :
The band-gap pressure dependence of gallium antimonide tunnel diodes has been exploited in the development of new electromechanical sensors. The outstanding features of these devices are simplicity, very small size (< 1 mm), good resolution (∼0.3 mm Hg for a 1000Hz bandwidth) and wide dynamic range (∼60 db). The temperature sensitivity corresponds to about 25 mm Hg/°C but is readily reduced by conventional compensation techniques to the equivalent of about 1 mm Hg/°C or better. The present design is particularly attractive for biomedical applications for which special configurations have been developed.
Keywords :
Capacitance-voltage characteristics; Dynamic range; Electromagnetic heating; Ion implantation; Mercury (metals); Schottky diodes; Semiconductor device doping; Semiconductor diodes; Sensor phenomena and characterization; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1969 International
Type :
conf
DOI :
10.1109/IEDM.1969.188194
Filename :
1476075
Link To Document :
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