• DocumentCode
    3553118
  • Title

    Submillimeter-size semiconductor sensors

  • Author

    Rindner, W. ; Cannon, R.

  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    The band-gap pressure dependence of gallium antimonide tunnel diodes has been exploited in the development of new electromechanical sensors. The outstanding features of these devices are simplicity, very small size (< 1 mm), good resolution (∼0.3 mm Hg for a 1000Hz bandwidth) and wide dynamic range (∼60 db). The temperature sensitivity corresponds to about 25 mm Hg/°C but is readily reduced by conventional compensation techniques to the equivalent of about 1 mm Hg/°C or better. The present design is particularly attractive for biomedical applications for which special configurations have been developed.
  • Keywords
    Capacitance-voltage characteristics; Dynamic range; Electromagnetic heating; Ion implantation; Mercury (metals); Schottky diodes; Semiconductor device doping; Semiconductor diodes; Sensor phenomena and characterization; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188194
  • Filename
    1476075