Arsenic emitter for gold-doped shallow-junction transistors

It has been known that a reduction in the isolation capacitance and the storage time of an integrated bipolar transistor could be achieved by the introduction of gold in silicon. The process of gold introduction requires a final high-temperature cycle after emitter diffusion to reactivate the gold, which in turn makes it difficult to control the base width of a shallow-junction transistor with a phosphorus emitter.