Picosecond-rise-time pulse applications of electron-beam-semiconductor devices

In this paper basic analytical and experimental results are presented for ultrafast amplifiers, pulse generators, and pulse-detection systems in which a modulated electron beam controls the current in a semiconductor target. The lumped target amplifier is discussed frst, and results are summarized from a simplified analysis of target response to step-function beam excitation. The optimization of amplifier rise time and peak output level is illustrated and predicted target gain, rise time, peak output current, voltage, and power capabilities are shown graphically. The feasibility of a subnanosecond-rise-time pulse amplifier with a peak output power of 100 kW is shown.