DocumentCode
3553194
Title
Comparison of X-band Gunn oscillator characteristics with silicon and GaAs IMPATTS
Author
Turlington, T.R.
Volume
16
fYear
1970
fDate
1970
Firstpage
52
Lastpage
52
Abstract
X-band Gunn oscillators and silicon and gallium arsenide IMPATTS are commercially available; each ihas its particular set of operating characteristics. Often, applications engineers are unaware of subtle differences between these oscillators differences that, depending on use, could cause considerable difficulty with power-supply oscillation or excessive system noise.
Keywords
Gallium arsenide; Gunn devices; Oscillators; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1970 International
Type
conf
DOI
10.1109/IEDM.1970.188247
Filename
1476359
Link To Document