Title :
The operation of kilowatt LSA oscillators
Author :
Berry, J.D. ; Woodard, D.W. ; Eastman, L.F.
Abstract :
New high power LSA results have produced over 2000 watts of peak power at over 10% efficiency in C-band from a single chip. Such results were made possible by recent breakthroughs in circuit analysis, and with the production of extremely uniform epitaxial layers of uo to 250 µm in thickness. Over 60% of the devices from such a wafer yielded in excess of 500 watts in similar operation.
Keywords :
Circuit analysis; Electric breakdown; Epitaxial layers; Heat sinks; Impedance; Oscillators; Production; RLC circuits; Shape; Temperature;
Conference_Titel :
Electron Devices Meeting, 1970 International
DOI :
10.1109/IEDM.1970.188249
