• DocumentCode
    3553229
  • Title

    Microwave acoustic surface-wave amplifier

  • Author

    Wauk, M.T.

  • Author_Institution
    Hughes Aircraft Co., Malibu, Calif.
  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    86
  • Lastpage
    86
  • Abstract
    Acoustic surface-wave amplifiers have been constructed for operation from 100 to 1000 MHz using ion-implanted n-type silicon positioned over LiNbO3with an air gap of a few hundred angstroms. These amplifiers are being utilized in large time-bandwidth product tapped delay lines operating in L-band to compensate for propagation loss and isolate successive taps, thereby increasing the dynamic range.
  • Keywords
    Aircraft manufacture; Conductivity; Delay lines; Dynamic range; L-band; Microwave amplifiers; Operational amplifiers; Pulse amplifiers; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188278
  • Filename
    1476390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553229