• DocumentCode
    3553254
  • Title

    A low-VTN-channel enhancement mode IGFET for beam-lead sealed-junction technology

  • Author

    Dawes, W.R.

  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    112
  • Lastpage
    112
  • Abstract
    An MOS study has demonstrated the feasibility of fabricating reliable low-threshold-voltage n-channel enhancement-mode sealed-junction beam-lead IGFET´s. By use of 10 ohm-cm p-type substrates and a gate dielectric of SiO2-Al2O3, stable 1-2 volt n-channel enhancement-mode IGFET´s can be fabricated if a high-work-function metal, such as platinum, tungsten, or molybdenum is used for the gate metallization. Platinum was chosen for initial stady because of its existing state of application in beam-lead technology. Characterization and analysis of MOS capacitors on 10 ohm-cm p-type substrates with an SiO2-Al2O3dielectric and platinum field plates will be described.
  • Keywords
    Dielectric substrates; Dielectrics and electrical insulation; Fabrication; MOS capacitors; Metal-insulator structures; Metallization; Platinum; Sputtering; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188301
  • Filename
    1476413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553254