GaAs pulse-generating avalanche trap and recovery (avatar) diode

A large-amplitude, subnanosecond-rise-time, pulse-generating GaAs diode has been developed. The diode has a ν-n structure; the ν-region was made by diffusing iron into n-GaAs. The iron in the diffused layer was detected by mass-spectrometer analysis; the depth of the diffused layer was of the order of 10 µm. Electrical contacts were formed by gold-germanium or indium alloying techniques. Compensation of carriers by diffusion of iron must be controlled precisely to produce pulse generation. The pulse generation could not be observed when the diffused layer converted to p-type.