Title :
Beam-leaded GaP electroluminescent diodes
Author :
Schumaker, N.E. ; Kuhn, M.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N.J.
Abstract :
Beam-leaded GaP electroluminescent diodes have been developed using a quasi-planar configuration. This new structure couples the advantages of beam-lead technology to the high-efficiency GaP p-n junctions prepared by liquid-phase epitaxial growth. These devices represent a significant improvement in the design of GaP diodes for applications involving discrete elements or integrated arrays.
Keywords :
Bonding; Diodes; Electroluminescence; Etching; Insulation; Laboratories; P-n junctions; Radiative recombination; Substrates; Telephony;
Conference_Titel :
Electron Devices Meeting, 1970 International
DOI :
10.1109/IEDM.1970.188340
