Title :
A three terminal voltage-tunable Gunn effect device
Author :
Nahas, J.J. ; Schwartz, R.J.
Author_Institution :
University of Notre Dame, Notre Dame, Ind.
Abstract :
A three terminal Gunn effect oscillator which allows the frequency of the oscillations to be controlled by a voltage applied to a control gate has been designed, fabricated, and tested. The control gate is a reversed biased gold on gallium arsenide Schottky barrier which overlays the region through which the domain passes.
Keywords :
Gunn devices; Voltage;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188383
