DocumentCode :
3553342
Title :
GaAs bulk-effect pulse regenerator with a Schottky barrier control gate
Author :
Takeuchi, Masaru ; Higashisaka, A. ; Sekido, Keiko
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
60
Lastpage :
62
Abstract :
A high-speed three-terminal pulse regenerator that is operable under dc-biased conditions and having the trigger sensitivity of as small as 0.1 volt has been developed to a practical level for the first time. The device can generate pulses of 0.3 - 1 ns width with output power levels in excess of 0.5 volt into a 50 Ω line.
Keywords :
Baseband; Cathodes; Computer simulation; Gallium arsenide; Gunn devices; Phase change materials; Pulse circuits; Repeaters; Schottky barriers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188384
Filename :
1476722
Link To Document :
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