Title :
Schottky-gate Gunn-effect digital device
Author :
Yanai, H. ; Sugeta, T. ; Sekido, K.
Author_Institution :
University of Tokoyo, Japan
Abstract :
The n-GaAs planar Gunn device with a Schottky-barrier gate near the cathode has been operated by controlling a domain nucleation-notch by means of the increase in the field due to the extension of the depletion layer under the gate. This three-terminal Gunn-effect digital device has several primary advantages such as excellent uni-directivity (more than 30 dB), simplicity in construction and circuit use, and a large trigger capability (more than 100 mA/V).
Keywords :
Cathodes; Computer simulation; Gunn devices; Inhibitors; Logic devices; Pulse circuits; Repeaters; Resistors; Shift registers; Voltage;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188385
