DocumentCode
3553345
Title
High-current, high-voltage, moat-etched Schottky diode
Author
Rhee, Changyong
Volume
17
fYear
1971
fDate
1971
Firstpage
64
Lastpage
64
Abstract
The application of Schottky diodes in high speed switching circuits has often been limited because of conventional devices inherently low reverse breakdown voltages and large leakage currents. Guard-ring Schottky diodes exhibit low leakage current and high reverse breakdown voltage, but their application has been confined to low currents because of minority carrier injection from the guard-ring at high forward bias level.
Keywords
Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188387
Filename
1476725
Link To Document