• DocumentCode
    3553372
  • Title

    High collector current in epitaxial transistors

  • Author

    Lindholm, F.A.

  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    94
  • Lastpage
    96
  • Abstract
    In this paper we unify the treatment of high current in the collector region of epitaxial transistors. New results yielded by this unification include: a) specification of the conditions that determine the predominant mechanism controlling the degradation of β and fT.
  • Keywords
    Charge carrier lifetime; Degradation; Doping profiles; Forward contracts; Laboratories; Monitoring; Multidimensional systems; Semiconductor process modeling; Thyristors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188412
  • Filename
    1476750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553372