Profiles of ion-implanted phosphorus in silicon: channeling and dechanneling

Effective use of ion-implantation in device design and fabrication requires an accurate knowledge of the profiles of the species one desired to implant. In particular, a knowledge of the sensitivity of these profiles to small errors in crystal alignment or angle of beam incidence is of great importance in achieving reproducible implanted profiles over the entire surface of a wafer. This is true whether one wishes to utilize channeling or to avoid channeling in obtaining a desired doping profile.