Characteristics of single heterojunction GaAlAs close-confinement lasers from 250 ° K to 400 ° K

The performance characteristics of GaAlAs laser diodes which emit in the wavelength interval from 7500 Å to 8000 Å at 300°K will be discussed. Two basic devices are considered: Single-Pellet devices having emission widths ranging from 3 to 16 mils and multiple-pellet stacked arrays. The devices were fabricated from GaAlAs heterojunction epitaxial layers which were grown on GaAs single crystal substrate by multiple liquid phase epitaxy. Data is presented showing emission wavelength, wavelength half-width, quantum efficiency, peak power output, lasing threshold current density and power efficiency of these devices in the temperature range of 250°K to 400°K. The performance and reliability of the GaAlAs lasers is then compared to single heterojunction GaAs lasers of the same geometry.