• DocumentCode
    3553429
  • Title

    A new vertical pnp transistor for integrated circuits

  • Author

    Ryono, K. ; Sasaki, I.

  • Author_Institution
    Nippon Electric Company, Ltd., Tokyo, Japan
  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    154
  • Lastpage
    154
  • Abstract
    The need for a monolithic integrated circuit (IC) containing pnp and npn transistors has been recognized for a long time and is becoming serious, for obtaining an unique and simple circuit. The most widely used method recently for incorporating pnp transistors into the ICs has been the employment of the well-known lateral transistor with low performance, hFEof ∼ 1 and fTof ∼ 1 MHz. Other structures have been proposed. However the improvement of one parameter has come at the expense of other parameters. Sometimes the structures are costly and complex.
  • Keywords
    Boron; Cameras; Costs; Employment; Fabrication; Linear circuits; Monolithic integrated circuits; Operational amplifiers; TV; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188464
  • Filename
    1476802