DocumentCode
3553429
Title
A new vertical pnp transistor for integrated circuits
Author
Ryono, K. ; Sasaki, I.
Author_Institution
Nippon Electric Company, Ltd., Tokyo, Japan
Volume
17
fYear
1971
fDate
1971
Firstpage
154
Lastpage
154
Abstract
The need for a monolithic integrated circuit (IC) containing pnp and npn transistors has been recognized for a long time and is becoming serious, for obtaining an unique and simple circuit. The most widely used method recently for incorporating pnp transistors into the ICs has been the employment of the well-known lateral transistor with low performance, hFE of ∼ 1 and fT of ∼ 1 MHz. Other structures have been proposed. However the improvement of one parameter has come at the expense of other parameters. Sometimes the structures are costly and complex.
Keywords
Boron; Cameras; Costs; Employment; Fabrication; Linear circuits; Monolithic integrated circuits; Operational amplifiers; TV; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188464
Filename
1476802
Link To Document