DocumentCode :
3553475
Title :
Influence of surface potential fluctuations on the operation of a MOS transistor in weak inversion
Author :
Van Overstraeten, R. ; Declerck, G. ; Broux, G.
Author_Institution :
Katholieke Universiteit Lueven, Heverlee, Belgium
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
28
Lastpage :
28
Abstract :
The existing theories describing the MOS transistor operation in weak inversion do not take into account the influence of surface potential fluctuations, caused by oxide charge fluctuations. These theories explain the difference between the theoretical and experimental slope of the loge ID -VG curves by the capture of minority carriers by surface states. The density of surface states necessary to explain this difference lies between 
and 
cm-2V-1.
and cm-2V-1.Keywords :
Density measurement; Equations; Fluctuations; Impurities; Low voltage; MOSFETs; Measurement standards; Oxidation; Surface fitting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249247
Filename :
1477083
Link To Document :
