• DocumentCode
    3553502
  • Title

    Characterization of arsenic-implanted silicon junctions

  • Author

    Schwettmann, F.N. ; Prince, J.L. ; Aiken, J.G.

  • Author_Institution
    Texas Instruments, Inc., Dallas, Texas
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    56
  • Lastpage
    56
  • Abstract
    Electrical characteristics of shallow (∼ 3500 Å) arsenic-implanted junctions have been determined for a wide range of process conditions and have been compared with arsenic diffused junctions obtained using a doped oxide diffusion source. Process conditions examined included various pre-and post-implantation gettering cycles, anneal temperatures (600 to 900°C), dose ( 1\\times10^{15} to 1\\times10^{16} ions/cm2), starting material (homogeneous, epl) and post-implantation surface passivation.
  • Keywords
    Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249285
  • Filename
    1477108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553502