DocumentCode
3553503
Title
GaAsP VLED´s by Zn-ion implantation
Author
Morgan, I.H.
Volume
18
fYear
1972
fDate
1972
Firstpage
56
Lastpage
58
Abstract
The feasibility of fabricating visible-light emitting diodes (VLED\´s) by ion implantation has been investigated. Zn-ions at 20-40 kev energy were implanted into Te-doped GaAs06 P0.4 epitaxial layers on GaAs substrates with ion doses ranging from 
to 
ions/cm2. Details of the diode fabrication process will be given, together with the characteristics of the finished devices, as well as resistivity, mobility, and photoluminescence data of the implanted layers as a function of the annealing and implantation parameters.
to ions/cm2. Details of the diode fabrication process will be given, together with the characteristics of the finished devices, as well as resistivity, mobility, and photoluminescence data of the implanted layers as a function of the annealing and implantation parameters.Keywords
Annealing; Bipolar transistors; Boron; Diodes; Doping; Heat treatment; Ion implantation; Optical noise; Protons; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249286
Filename
1477109
Link To Document