DocumentCode :
3553505
Title :
A planar NPN InSb transistor fabricated using proton bombardment techniques
Author :
Greenstein, E.
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
58
Lastpage :
58
Abstract :
Non p diodes anti an n-channel depletion mode IGFET have been made on InSb using a proton bombardment technique. Extending the technique one step further has made it possible to fabricate a lateral npn transistor on 
cm-3germanium doped InSb. Small signal betas of 
have been obtained at collector currents of approximately 200 microamperes and a collector emitter voltage of about 0.2 volt. The base region is optically active. By increasing the base drive, the optical response can be increased by about a factor of three over the open base case before noise becomes significant.
cm-3germanium doped InSb. Small signal betas of have been obtained at collector currents of approximately 200 microamperes and a collector emitter voltage of about 0.2 volt. The base region is optically active. By increasing the base drive, the optical response can be increased by about a factor of three over the open base case before noise becomes significant.Keywords :
Protons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249287
Filename :
1477110
Link To Document :
